JPH0530276Y2 - - Google Patents
Info
- Publication number
- JPH0530276Y2 JPH0530276Y2 JP1343589U JP1343589U JPH0530276Y2 JP H0530276 Y2 JPH0530276 Y2 JP H0530276Y2 JP 1343589 U JP1343589 U JP 1343589U JP 1343589 U JP1343589 U JP 1343589U JP H0530276 Y2 JPH0530276 Y2 JP H0530276Y2
- Authority
- JP
- Japan
- Prior art keywords
- cesium
- target
- reservoir
- ion source
- negative ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052792 caesium Inorganic materials 0.000 claims description 41
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 39
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000010884 ion-beam technique Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- -1 cesium ions Chemical class 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1343589U JPH0530276Y2 (en]) | 1989-02-07 | 1989-02-07 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1343589U JPH0530276Y2 (en]) | 1989-02-07 | 1989-02-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02104559U JPH02104559U (en]) | 1990-08-20 |
JPH0530276Y2 true JPH0530276Y2 (en]) | 1993-08-03 |
Family
ID=31223741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1343589U Expired - Lifetime JPH0530276Y2 (en]) | 1989-02-07 | 1989-02-07 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0530276Y2 (en]) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4636913B2 (ja) * | 2005-03-16 | 2011-02-23 | キヤノン株式会社 | レンズ鏡筒および光学機器 |
-
1989
- 1989-02-07 JP JP1343589U patent/JPH0530276Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH02104559U (en]) | 1990-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3562141A (en) | Vacuum vapor deposition utilizing low voltage electron beam | |
US4620913A (en) | Electric arc vapor deposition method and apparatus | |
JPS6020440A (ja) | イオンビ−ム加工装置 | |
EP1719147B1 (en) | Fluid-cooled ion source | |
US4620081A (en) | Self-contained hot-hollow cathode gun source assembly | |
JPH0530276Y2 (en]) | ||
JPS56139673A (en) | Manufacture of lead coat | |
JPS6324068A (ja) | 連続真空蒸着メツキ装置 | |
JP3958869B2 (ja) | MgO膜形成方法およびパネル | |
CN208240613U (zh) | 低压磁控阴极离子源 | |
JPS6352108B2 (en]) | ||
JPH0325835A (ja) | プラズマスパッタ型負イオン源 | |
JPS6173877A (ja) | 蒸着装置 | |
JPH0722843Y2 (ja) | プラズマスパッタ型負イオン源 | |
JP2000017429A (ja) | 真空成膜装置 | |
CN210085559U (zh) | 一种刻蚀阳极屏蔽绝缘装置 | |
JP2570772B2 (ja) | イオンビーム照射装置 | |
JP2592617B2 (ja) | イオン・プレーテイング装置 | |
JPH10176263A (ja) | イオンプレーティング装置の運転方法 | |
JPS594045Y2 (ja) | 薄膜生成用イオン化装置 | |
JP2573173Y2 (ja) | プラズマスパッタ型負イオン源 | |
JP2506779Y2 (ja) | イオン源 | |
JPH0342608Y2 (en]) | ||
JPS62122210A (ja) | 薄膜形成装置 | |
Palatnik et al. | Vacuum Condensates of Niobium Produced by Atomization of Target by Accelerated Ions of Niobium |